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Products/Services for rf transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
RF switches route radio frequency signals to particular waveguides. Search by Specification | Learn More about RF Switches
...package types for general purpose diodes include transistor outline (TO), diode outline (DO), small outline transistor (SOT), and small outline diode (SOD). Other general purpose diodes are available in a discrete package (DPAK) or in D2PAK, a large... Search by Specification | Learn More about General Purpose Diodes
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two Search by Specification | Learn More about Darlington Transistors
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Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
Discontinued & Obsolete Electronic Parts by AMS American Microsemiconductor, Inc.
Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
IRFH7934TR2PBF N-channel 30V MOSFET Future Electronics
Vishay Siliconix’s TrenchFET® Gen III Power MOSFET Mouser Electronics, Inc.
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Product News for rf transistors
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
A Flexible Dual-band WiMAX RF Front End Solution
Designers of mobile WiMAX/WiBRO systems face many challenges when designing and specifying the RF front end. There are issues with system power output, FCC regulations, power consumption, and interference with local cellular radios. Other issues are layout and design flexibility, and the potential need for custom modules. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
Parts by Number for rf transistors
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| RF1029 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF3096 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF3094 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF1030 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | RF1030 Transistors UHF/Microwave Transistors Bipolar NPN RF1030 is on sale at our online store. Buy it for 29.00 or less. Call 973-377-9566 100% Satisfaction Gauranteed. FREE UPS ground shipping or more. Also get special discount on International or |
| RF1032 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
Conduct Research
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AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer to high frequency power amplifiers. Although matching networks normally take the form of...(read more)
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AN215A: RF Small Signal Design Using Two Port Controllers, Courtesy of Motorla
Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution (free from approximation) available for the complete...(read more)
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Silicon RF Power MOSFETS
Silicon RF Power MOSFETS Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of...(read more)
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Non-RF Applications for the Surface Mount Schottky Diode Pairs -App Note
Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to 100 GHz. Today, advanced wafer and...(read more)
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Biasing MSA Series RF Integrated Circuits - App Note
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an...(read more)
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Comparison of Bulk and Epitaxial PIN Diodes in Low-Cost Wideband RF Switching - White Paper
Both electromechanical and semiconductor switches are proven technologies used in the control and routing of RF signals. While the use of mechanical switches can be justified in precision test...(read more)
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Microwave Transistor Bias Considerations - App Note
Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and...(read more)
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Low Distortion PIN Diode Switch Using Surface Mount Devices - App Note
One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current...(read more)
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Trends in Microwave/Millimeter-Wave Front-End Technology
Unique, high-performance components are utilized between the air or fiber-optic media interface and baseband/digital signal processing functions. TriQuint and other suppliers have developed power...(read more)
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High Linearity and Medium Power Applications Using the Avago's ATF-511P8 PHEMT-App Note
Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is...(read more)
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RF RF RF Power RF Industrial, Scientific and Medical Power Transistors RF GaAs Power Transistors Linear Transistors -- To 6000 MHz See Freescale Semiconductor, Inc. Information |
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RF WiMAX, WiBro, BWA Power Transistors RF Power RF Industrial, Scientific and Medical Power Transistors RF LDMOS Power Transistors Mobile -- To 520 MHz See Freescale Semiconductor, Inc. Information |
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RF Transistors Information | Business.com GlobalSpec.com: RF Transistors Provides database of suppliers for RF Transistors. See Business.com, Inc. Information |
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RF Micro Devices :: RF Solutions & Wireless Communication... Discrete Transistors Discrete Transistors (Low Noise) General Purpose RF Overview Amplifiers (Broadband, General Purpose) See RF Micro Devices, Inc. (RFMD) Information |
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Analog Devices, Inc. | Converters Amplifiers Processors... RF/IF Components Sensors Switches/Multiplexers RF/IF Amplifiers Variable Gain Amplifiers See Analog Devices, Inc. Information |
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RF Transistors (LNA) - Infineon Technologies Si RF Transistors, fT < 24 GHz Si, SiGe RF Transistors, fT = 24 to 70 GHz > Small Signal Discretes (RF) > RF Transistors (LNA) See Infineon Technologies Corporation Information |
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RF Transistors (LNA) - Infineon Technologies Si RF Transistors, fT < 24 GHz Si, SiGe RF Transistors, fT = 24 to 70 GHz > Small Signal Discretes (RF) > RF Transistors (LNA) See Infineon Technologies Corporation Information |
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RF Parts Company™ Amateur Radio Catalog RF Modules Transistors Wattmeters, Elements & Accessories Bird Electronic & Coaxial Dynamics NEW: Used Equipment Section! |
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NXP Semiconductors See NXP Information |
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RF wideband transistors from NXP Semiconductors RF wideband transistors Selection guide RF wideband transistors pHEMTs Transistor wideband NPN up to 10 GHz See NXP Information |
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