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Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More about Gate Drivers
AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes). Learn More about AC to DC Converter Chips
Power electronics devices are solid state devices or transistors capable of modulating or converting electrical power. Learn More about Power Electronics Devices
Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers
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AP30G120W-3 Insulated Gate Bipolar Transistor Advanced Power Electronics Corp. USA
Discretes from Smith & Associates Smith & Associates
Junction Field Effect Transistor J-FET from AMS American Microsemiconductor, Inc.
Low Noise-Low Power Monolithic Dual N-Channel JFET Linear Integrated Systems, Inc.
I nV Low Noise N-Channel JFET Linear Integrated Systems, Inc.
I nV Low Noise Monolithic Dual N-Channel JFET Linear Integrated Systems, Inc.
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Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
PS9552 is a MOSFET / IGBT Gate Driver in DIP8 package. A signal processing circuit and power output transistor on the output side provide gate drive up to 2.5A.
The PS9552 Series is designed specifically for high common mode transient immunity (CMR), high output current and high switching speed. PS9552L1, PS9552L2 and PS9552L3 provide lead-form options. (read more)
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
1-Source Electronic Components stocks and distributes an extensive array of commercial-grade, industrial-grade, and mil-spec transistors. In addition, they maintain a vast worldwide network of transistor manufacturers and distributors, giving them instant access to any obsolete or hard-to-find items that they do not stock. (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| IGBT TRANSISTOR PH40KD 1 | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| IXDR30N120 | Newark | IXYS SEMICONDUCTOR | All Supplier Direct Ship | IGBT, ISOPLUS247; Transistor type:NPT; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:2.4V; Power dissipation:200W; Case style:ISOPLUS-247; Pin configuration:Single; Power, Pd:200W; Thermal resistance, RoHS Compliant: Yes |
| IXER35N120D1 | Newark | IXYS SEMICONDUCTOR | All Supplier Direct Ship | IGBT, ISOPLUS247; Transistor type:NPT; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:2.2V; Power dissipation:200W; Case style:ISOPLUS-247; Pin configuration:Copack (FRD); Thermal resistance, junction to RoHS Compliant: Yes |
| IXGC16N60C2D1 | Newark | IXYS SEMICONDUCTOR | All Supplier Direct Ship | IGBT, ISOPLUS220; Transistor type:NPT - <100kHz; Voltage, Vces:600V; Current, Ic continuous a max:20A; Voltage, Vce sat max:3V; Power dissipation:63W; Case style:ISOPLUS-220; Pin configuration:Copack (FRD); Termination Type:Through RoHS Compliant: Yes |
| IXGR120N60C2 | Newark | IXYS SEMICONDUCTOR | All Supplier Direct Ship | IGBT, ISOPLUS247; Transistor type:NPT - <100kHz; Voltage, Vces:600V; Current, Ic continuous a max:75A; Voltage, Vce sat max:2.7V; Power dissipation:300W; Case style:ISOPLUS-247; Pin configuration:Single; Termination Type:Through RoHS Compliant: Yes |
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Power Management ICs, Power Semiconductors, Signal Path ICs,... See Fairchild Semiconductor Corporation Information |
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Fairchild Semiconductor - Site Search - High Performance... Product Family in High Performance Transistor High Speed Logic Gate IGBT/MOSFET Gate Driver Isolated Error Amplifier Low Voltage High Performance See Fairchild Semiconductor Corporation Information |
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The Insulated Gate Bipolar Transistor (IGBT) The Insulated Gate Bipolar Transistor (IGBT) |
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Transistor bipolaire à grille isolée - Wikipédia Lâ??IGBT présente quatre couches N-P-N-P qui peuvent sous certaines conditions devenir passantes à la manière dâ??un thyristor, du fait de la |
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Transistor IGBT - Wikipedia, la enciclopedia libre El transistor bipolar de puerta aislada (IGBT, del inglés Insulated Gate Bipolar Transistor) es un dispositivo semiconductor que generalmente se |
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Implement insulated gate bipolar transistor (IGBT) - Simulink IGBT - Implement insulated gate bipolar transistor (IGBT) The IGBT block implements a semiconductor device controllable by the gate signal. See MathWorks, Inc. (The) Information |
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Model N-Channel IGBT - Simulink The N-Channel IGBT block models a PNP Bipolar transistor driven by an N-Channel MOSFET, as shown in the following figure: See MathWorks, Inc. (The) Information |
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NationMaster - Encyclopedia: IGBT transistor Encyclopedia > IGBT transistor A power IGBT |
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IGBT transistor. Who is IGBT transistor? What is IGBT... Search for images of IGBT transistor Message boards Post comment |
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IGBT-Modules - Infineon Technologies [Please Select IGBT Modules up to 600V > IGBT Modules up to 600V Chopper > IGBT Modules up to 600V Dual > IGBT Modules up to 600V FourPACK > IGBT See Infineon Technologies Corporation Information |