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Products/Services for IGBT Transistor

<B>Transistors</B>
Transistors - (465 companies)

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors

Specialty <B>Transistors</B>
Specialty Transistors - (30 companies)

Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors

Small-signal Bipolar <B>Transistors</B> (BJT)
Small-signal Bipolar Transistors (BJT) - (79 companies)

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)

Gate Drive Transformers
Gate Drive Transformers - (30 companies)

Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers

Power Bipolar <B>Transistors</B>
Power Bipolar Transistors - (78 companies)

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors

RF <B>Transistors</B>
RF Transistors - (86 companies)

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors

Junction Field-Effect <B>Transistors</B> (JFET)
Junction Field-Effect Transistors (JFET) - (60 companies)

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)

Bipolar RF <B>Transistors</B>
Bipolar RF Transistors - (42 companies)

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors

RF MOSFET <B>Transistors</B>
RF MOSFET Transistors - (33 companies)

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

Darlington <B>Transistors</B>
Darlington Transistors - (47 companies)

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors

AC to DC Converter Chips
AC to DC Converter Chips - (15 companies)

AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes). Learn More about AC to DC Converter Chips

Power Electronics Devices
Power Electronics Devices - (66 companies)

Power electronics devices are solid state devices or transistors capable of modulating or converting electrical power. Learn More about Power Electronics Devices

Gate Drivers
Gate Drivers - (65 companies)

Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More about Gate Drivers

Metal-oxide Semiconductor FET (MOSFET)
Metal-oxide Semiconductor FET (MOSFET) - (119 companies)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)

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Product News for IGBT Transistor

Advanced Power Electronics Corp. USA
AP30G120W-3 Insulated Gate Bipolar Transistor

The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)

California Eastern Laboratories - CEL
PS9505 IGBT gate drive optocoupler

The PS9505 series 2.5 A output current, high CMR IGBT gate drive optocoupler is available in an 8 pin DIP package. (read more)

American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT)

Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)

Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
Power RF Transistors - NPN or PNP Bipolar from AMS

NPN or PNP Bipolar RF Transistors.

If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)

Browse RF Transistors Datasheets for American Microsemiconductor, Inc.
Linear Integrated Systems, Inc.
NPN and PNP Monolithic Dual Transistors

LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)

American Microsemiconductor, Inc.
Unijunction Transistors (UJT's) from AMS

Unijunction Transistor (UJT) from American Microsemiconductor.

The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)

Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc.
Avago Technologies
2.0 Amp Output Current IGBT Gate Drive Optocoupler

The HCPL-3120 gate drive optocouplers contain a GaAsP LED. The LED is optically coupled to an integrated circuit with a power output stage. (read more)

Browse Optocouplers Datasheets for Avago Technologies
American Microsemiconductor, Inc.
AMS: Unijunction Transistor (UJT)

Unijunction Transistor (UJT) from American Microsemiconductor.

The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)

Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
Programmable Unijunction Transistor known as PUT

(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.

Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)

Browse Programmable Unijunction Transistors (PUT) Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
Junction Field Effect Transistor J-FET from AMS

The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)

Browse Junction Field-Effect Transistors (JFET) Datasheets for American Microsemiconductor, Inc.
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Parts by Number for IGBT Transistor

Part # Distributor Manufacturer Product Category Description
IGBT TRANSISTOR PH40KD 1 netCOMPONENTS Not Provided Not Provided Not Provided
IXGR60N60B2 Newark IXYS SEMICONDUCTOR All Supplier Direct Ship IGBT, ISOPLUS247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:75A; Voltage, Vce Sat Max:2V; Power Dissipation:250W; Case Style:ISOPLUS-247; Pin Configuration:Single; Termination Type:Through Hole; Thermal RoHS Compliant: Yes
IRGB4056DPBF Newark INTERNATIONAL RECTIFIER All Supplier Direct Ship IGBT, COPAK, TO-220; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:24A; Voltage, Vce Sat Max:1.55V; Power Dissipation:140W; Case Style:TO-220; Current, Icm Pulsed:48A; Power, Pd:140W; Termination Type:Through RoHS Compliant: Yes
6SY70000AC76 PLC Radwell SIEMENS Not Provided TRANSISTOR IGBT MODULE 1MBI400NA-120
MG100J6ES50 PLC Radwell TOSHIBA Not Provided POWER TRANSISTOR IGBT SILICON N CHANNEL PRICE/EA
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Conduct Research

Engineering Web Search: IGBT Transistor
Fairchild Semiconductor - Site Search - High Performance...
Product Family in High Performance Transistor High Speed Logic Gate IGBT/MOSFET Gate Driver Isolated Error Amplifier Low Voltage High Performance
See Fairchild Semiconductor Corporation Information
Fairchild Semiconductor - Site Search - IGBT Module
(2) High Performance Transistor (23) High Speed Logic Gate (22) HVIC (23) IEEE 1284 (3) IGBT Discrete (108) IGBT Module (4) IGBT/MOSFET Gate Driver
See Fairchild Semiconductor Corporation Information
Insulated-gate bipolar transistor - Wikipedia, the free...
Static characteristic of an IGBT. The insulated gate bipolar transistor or IGBT is a three
Transistor bipolaire à grille isolée - Wikipédia
Lâ??IGBT présente quatre couches N-P-N-P qui peuvent sous certaines conditions devenir passantes à la manière dâ??un thyristor, du fait de la
Richardson Electronics Ltd - Power IGBT Transistor

See Richardson Electronics, Ltd. Information
Implement insulated gate bipolar transistor (IGBT) - Simulink
IGBT - Implement insulated gate bipolar transistor (IGBT) The IGBT block implements a semiconductor device controllable by the gate signal.
See MathWorks, Inc. (The) Information
Model N-Channel IGBT - Simulink
The N-Channel IGBT block models a PNP Bipolar transistor driven by an N-Channel MOSFET, as shown in the following figure:
See MathWorks, Inc. (The) Information
Powerex Power Semiconductors â?? Power Semiconductor...

See Powerex, Inc. - PA Information
V I S H A Y S E M I C O N D U C T O R S Optocouplers and...
DRIVEN The IGBT, as a first approximation, can be modeled as a Very high, small Current density per High at low voltage PNP transistor driven by a
See Vishay Intertechnology, Inc. Information
Application Note APT0201 Rev. B July 1, 2002 IGBT Tutorial...
a more detailed equivalent driving a wide base PNP bipolar transistor in a circuit model for an IGBT shown in Figure 3. Darlington configuration.
See Microsemi Corp. Information

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