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Product Alerts
Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes). Learn More about AC to DC Converter Chips
Power electronics devices are solid state devices or transistors capable of modulating or converting electrical power. Learn More about Power Electronics Devices
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More about Gate Drivers
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
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AP30G120W-3 Insulated Gate Bipolar Transistor Advanced Power Electronics Corp. USA
Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
NPN and PNP Monolithic Dual Transistors Linear Integrated Systems, Inc.
IRFB4127PbF with TrenchFET Gen 6 Technology Future Electronics
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The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
The PS9505 series 2.5 A output current, high CMR IGBT gate drive optocoupler is available in an 8 pin DIP package. (read more)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
The HCPL-3120 gate drive optocouplers contain a GaAsP LED. The LED is optically coupled to an integrated circuit with a power output stage. (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| IGBT TRANSISTOR PH40KD 1 | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| IXGR60N60B2 | Newark | IXYS SEMICONDUCTOR | All Supplier Direct Ship | IGBT, ISOPLUS247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:75A; Voltage, Vce Sat Max:2V; Power Dissipation:250W; Case Style:ISOPLUS-247; Pin Configuration:Single; Termination Type:Through Hole; Thermal RoHS Compliant: Yes |
| IRGB4056DPBF | Newark | INTERNATIONAL RECTIFIER | All Supplier Direct Ship | IGBT, COPAK, TO-220; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:24A; Voltage, Vce Sat Max:1.55V; Power Dissipation:140W; Case Style:TO-220; Current, Icm Pulsed:48A; Power, Pd:140W; Termination Type:Through RoHS Compliant: Yes |
| 6SY70000AC76 | PLC Radwell | SIEMENS | Not Provided | TRANSISTOR IGBT MODULE 1MBI400NA-120 |
| MG100J6ES50 | PLC Radwell | TOSHIBA | Not Provided | POWER TRANSISTOR IGBT SILICON N CHANNEL PRICE/EA |
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Fairchild Semiconductor - Site Search - High Performance... Product Family in High Performance Transistor High Speed Logic Gate IGBT/MOSFET Gate Driver Isolated Error Amplifier Low Voltage High Performance See Fairchild Semiconductor Corporation Information |
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Fairchild Semiconductor - Site Search - IGBT Module (2) High Performance Transistor (23) High Speed Logic Gate (22) HVIC (23) IEEE 1284 (3) IGBT Discrete (108) IGBT Module (4) IGBT/MOSFET Gate Driver See Fairchild Semiconductor Corporation Information |
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Insulated-gate bipolar transistor - Wikipedia, the free... Static characteristic of an IGBT. The insulated gate bipolar transistor or IGBT is a three |
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Transistor bipolaire à grille isolée - Wikipédia Lâ??IGBT présente quatre couches N-P-N-P qui peuvent sous certaines conditions devenir passantes à la manière dâ??un thyristor, du fait de la |
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Richardson Electronics Ltd - Power IGBT Transistor See Richardson Electronics, Ltd. Information |
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Implement insulated gate bipolar transistor (IGBT) - Simulink IGBT - Implement insulated gate bipolar transistor (IGBT) The IGBT block implements a semiconductor device controllable by the gate signal. See MathWorks, Inc. (The) Information |
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Model N-Channel IGBT - Simulink The N-Channel IGBT block models a PNP Bipolar transistor driven by an N-Channel MOSFET, as shown in the following figure: See MathWorks, Inc. (The) Information |
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Powerex Power Semiconductors â?? Power Semiconductor... See Powerex, Inc. - PA Information |
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V I S H A Y S E M I C O N D U C T O R S Optocouplers and... DRIVEN The IGBT, as a first approximation, can be modeled as a Very high, small Current density per High at low voltage PNP transistor driven by a See Vishay Intertechnology, Inc. Information |
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Application Note APT0201 Rev. B July 1, 2002 IGBT Tutorial... a more detailed equivalent driving a wide base PNP bipolar transistor in a circuit model for an IGBT shown in Figure 3. Darlington configuration. See Microsemi Corp. Information |