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Products/Services for Bipolar RF Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
RF isolators and RF circulators are passive devices used to control the propagation of an RF signal. Search by Specification | Learn More about RF Isolators and RF Circulators
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
RF waveguide amplifiers accept a varying input signal and produce an output signal that varies in the same way, but with a larger amplitude. Learn More about RF Waveguide Amplifiers
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Transistor Kendu International Inc.
Discretes from Smith & Associates Smith & Associates
Vishay Siliconix’s TrenchFET® Gen III Power MOSFET Mouser Electronics, Inc.
CMOS Gate Arrays - Gate Arrays Universal Semiconductor, Inc.
CMOS Gate Arrays Universal Semiconductor, Inc.
IRFS4620PBF HEXFET® power MOSFETs Future Electronics
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Product News for Bipolar RF Transistors
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
AP30G120W-3 Insulated Gate Bipolar Transistor
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
8B Voltage and Bipolar Current Output Modules
Dataforth's 8B49 voltage output modules accept high-level voltage input, then isolate, filter, and convert the signal to a high-level isolated process voltage output. The 8B39-07 bipolar current output module accepts high-level voltage or process current input, then isolates, filters, and converts the signal to an analog process current output. (read more)
Parts by Number for Bipolar RF Transistors
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| RF1030 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | RF1030 Transistors UHF/Microwave Transistors Bipolar NPN RF1030 is on sale at our online store. Buy it for 29.00 or less. Call 973-377-9566 100% Satisfaction Gauranteed. FREE UPS ground shipping or more. Also get special discount on International or |
| RF1029 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF3096 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF3094 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF1032 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
Conduct Research
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Biasing MSA Series RF Integrated Circuits - App Note
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an...(read more)
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TT electronics Semelab - Discrete Semiconductor Design,... RF Products Power Products Multi-Chip Arrays Hi-Rel Linear Guide Space Products Audio Brochure See Semelab Plc. Information |
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RF Transistors Information | Business.com Some of the most common types of RF transistors include metal oxide semiconductor field effect transistors (MOSFET), laterally diffused metal oxide See Business.com, Inc. Information |
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NXP Semiconductors Search See NXP Information |
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NXP Semiconductors Bipolar transistors Data converters Diodes RF Sensors Thyristors Audio / video Automotive See NXP Information |
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First Demonstration of 4H-SiC RF Bipolar Junction Transistors... First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with f /f of 7/5.2 GHz T MAX Feng Zhao1, 2, Ivan See Microsemi Corp. Information |
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RF Transistors (LNA) - Infineon Technologies The Infineon RF Bipolar Transistors in standard SOT, flatlead TSFP and new leadless ultra miniature TSLP packages are excellent choice for a wide See Infineon Technologies Corporation Information |
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RF Transistors (LNA) - Infineon Technologies The Infineon RF Bipolar Transistors in standard SOT, flatlead TSFP and new leadless ultra miniature TSLP packages are excellent choice for a wide See Infineon Technologies Corporation Information |
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Process Technology - RF and Wireless - Maxim RF BiCMOS MBiC-2, F60, and GST-4P, representing our second-generation RF BiCMOS process family, offer high-speed, double-poly-silicon SiGe bipolar See Maxim Integrated Products, Inc. Information |
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STMicroelectronics - Radio Frequency RF power transistors are used whenever an electromagnetic signal needs to be amplified and transmitted from an antenna. See STMicroelectronics, Inc. Information |
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Richardson Electronics Ltd - HOME RF Transistors RF Power RF Power Transistor Bipolar/HBT RF Small Signal Transistor Bipolar/HBT RF Small Signal Transistor E-pHEMT See Richardson Electronics, Ltd. Information |
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